Description:
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
CEP93A3
Features:
1) VDS=30V,ID=180A,RDS(ON)≤ 3mΩ@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
GDS
Absolute Maximum Ratings:(TC=25℃ unless otherwise noted)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain Current-1
ID
EAS
PD
TJ, TSTG
Continuous Drain Current-TC=100℃
Pulsed Drain Current1
Single Pulse Avalanche Energy3
Power Dissipation4
Operating and Storage Junction Temperature Range
Thermal Characteristics:
Ratings
30
±20
180
127
720
439
115
-55 to +175
Symbol
Parameter
Max
RƟJC
Thermal Resistance,Junction to Case1
1.3
RƟJA
Thermal Resistance,Junction to Ambient1
62.5
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Units
V
V
A
mJ
W
℃
Units
℃/W