CEM7350L
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time2,3
Rise Time2,3
Turn-Off Delay Time2,3
Fall Time2,3
Total Gate Charge2,3
Gate-Source Charge2,3
Gate-Drain Charge2,3
---
18
36
ns
VGS=-10V,VDD=-50V
---
8
16
ns
RG=25Ω,ID=-1.8A
---
100 200
ns
---
30
60
ns
---
20
40
nC
VGS=-10V,VDS=-80V,ID=-1.8A
---
3.5
7
nC
---
4.6
9
nC
Drain-Source Diode Characteristics
VSD
Diode Forward Voltage
VGS=0V,IS=-1A,TJ=25℃
---
---
-1
V
IS
Continuous Source Current
---
---
-1.8
V
VG=VD=0V , Force Current
ISM
Pulsed Source Current
---
---
-3.6
V
Trr
Reverse Recovery Time
VR=-100V, IS=-1A
---
13
---
ns
Qrr
Reverse Recovery Charge
di/dt=100A/μs, TJ=25℃
---
15
---
nC
Notes:
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3. Essentially independent of operating temperature.
P -Channel Typical Characteristics: (TC=25℃ unless otherwise noted)
℃ TJ , Junction Temperature ( )
Fig.1 Continuous Drain Current vs. TJ
℃ TJ , Junction Temperature ( )
Fig.2 Normalized RDSON vs. TJ
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