CEM7350L
VDS
90%
VGS
Td(on)
Tr
Ton
Td(off)
Tf
Toff
Fig.10 Switching Time Waveform
10%
Fig.11 Gate Charge Waveform
P-Channel Electrical Characteristics:(TA=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA
-100 ---
---
V
VGS=0V, VDS=-100V,TJ=25℃
---
---
-1
μA
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=-80V,TJ=125℃
---
---
-10 μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
--- ±100 nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
-1.2 -1.6 -2.5
V
RDS(ON)
Drain-Source On Resistance
VGS=-10V,ID=-1.8A
VGS=-4.5V,ID=-1.5A
---
165 200
mΩ
---
180 230
GFS
Forward Transconductance
VDS=--10V, ID=-3A
---
6.5
---
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
VDS=-50V, VGS=0V, f=1MHz
--- 1455 2200
---
880 1300 pF
Crss
Reverse Transfer Capacitance
---
58
85
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
16
---
Ω
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