2SCR642PHZGT100 Ver la hoja de datos (PDF) - ROHM Semiconductor
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2SCR642PHZGT100 Datasheet PDF : 9 Pages
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2SCR642P HZG
Datasheet
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
Values
Unit
VCBO
30
V
VCEO
30
V
VEBO
6
V
IC
3
A
ICP*1
10
A
PD*2
0.5
W
PD*3
2.0
W
Tj
150
℃
Tstg
-55 to +150
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
BVCBO IC = 100μA
BVCEO IC = 1mA
30 -
-
V
30 -
-
V
Emitter-base breakdown voltage BVEBO IE = 100μA
6
-
-
V
Collector cut-off current
ICBO VCB = 30V
-
-
1 μA
Emitter cut-off current
IEBO VEB = 4V
-
-
1 μA
Collector-emitter saturation voltage VCE(sat)*4 IC = 2A, IB = 100mA
- 200 400 mV
DC current gain
hFE VCE = 2V, IC = 500mA 200
-
500
-
Transition frequency
f T*4
VCE = 10V, IE = -100mA,
f = 100MHz
-
250
-
MHz
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
-
25
-
pF
Turn-On time
Storage time
Fall time
ton IC = 2.5A,
IB1 = 250mA,
tstg
IB2 = -250mA,
VCC ⋍ 10V,
tf
RL = 3.9Ω
See test circuit
-
40
-
ns
- 320 -
ns
-
25
-
ns
*1 Pw=1ms, Single Pulse
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board.(40×40×0.7mm)
*4 Pulsed
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20200609 - Rev.001
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