SI4202DY-T1-GE3 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SI4202DY-T1-GE3 Datasheet PDF : 10 Pages
| |||
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
10
VGS = 10 V thru 4 V
40
8
Si4202DY
Vishay Siliconix
30
VGS = 3 V
20
10
0
0.0
0.020
VGS = 2 V
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
6
4
TC = 25 °C
2
TC = 125 °C
TC = - 55 °C
0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
0.018
0.016
0.014
0.012
VGS = 4.5 V
VGS = 10 V
0.010
0
10
20
30
40
50
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 8 A
8
VDS = 15 V
6
VDS = 10 V
VDS = 20 V
4
800
Ciss
600
400
Coss
200
Crss
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
2.0
ID = 8 A
1.7
1.4
VGS = 10 V
VGS = 4.5 V
1.1
2
0.8
0
0.0
2.4
4.8
7.2
9.6
12.0
Qg - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67092
S10-2602-Rev. A, 15-Nov-10
www.vishay.com
3
Share Link: 