150C80B Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza

componentes Descripción

Fabricante

150C80B

Silicon Controlled Rectifier

New Jersey Semiconductor 

Switching

Critical rate of rise of on-state current (note 1)

Typical delay time (note 1)

Typical circuit commuted turn-off time (note 2)

di/dt

100A/usec.

3.0 usec.

100 usec.

T J = 125°C

Tj = 125°C

Note 1: 'TM = 100A,V 0 =VDRM, VGT = 12V open circuit, 20 ohm-0.1 usec rise time -

Note 2: ]TM = 100A, di/dt = 5A/usec,vR during turn-off internal = 50V min,

reapplied dv/dt = 20V/usec., linear to rated VDRM, VGT = 0V

Max. gate voltage to trigger

Max, nontriggering gate voltage

Max. gate current to trigger

Max. peak gate power

Average gate power

Max. peak gate current

Max. peak gate voltage (forward)

Max. peak gate voltage (reverse)

Triggering

VGT

VGD

PPGGMT

PG(AV)

1 GM

VGM

VGM

3.0V

0.25V

150mA

10W

2.0W

2.0A

10V

5.0V

TJ = 25° C

Tj = 125°C

Tj = 25°C

tp = 10 usec.

Max. leakage current

Max. reverse leakage

Critical rate of rise of off-state voltage

Blocking

'DRM

'RRM

dv/dt

20mA

20mA

200V/usec.

TJ =i25°c &

Tj =125°C & V R R M

TJ =125°C

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