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Número de pieza
componentes Descripción
BZX55C75 Ver la hoja de datos (PDF) - Jiangsu High diode Semiconductor Co., Ltd
Número de pieza
componentes Descripción
Fabricante
BZX55C75
DO-35 Glass-Encapsulate Diodes
Jiangsu High diode Semiconductor Co., Ltd
BZX55C75 Datasheet PDF : 6 Pages
1
2
3
4
5
6
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
BZX55C..
Part Number
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
BZX55C3V9
BZX55C4V3
BZX55C4V7
BZX55C5V1
BZX55C5V6
BZX55C6V2
BZX55C6V8
BZX55C7V5
BZX55C8V2
BZX55C9V1
BZX55C10
BZX55C11
BZX55C12
BZX55C13
BZX55C15
BZX55C16
BZX55C18
BZX55C20
BZX55C22
BZX55C24
BZX55C27
BZX55C30
BZX55C33
BZX55C36
BZX55C39
BZX55C43
BZX55C47
BZX55C51
BZX55C56
BZX55C62
BZX55C68
BZX55C75
Zener voltage
range
V
Z
at I
ZT
V
Min.
Max.
2.28
2.56
2.5
2.9
2.8
3.2
3.1
3.5
3.4
3.8
3.7
4.1
4
4.6
4.4
5
4.8
5.4
5.2
6
5.8
6.6
6.4
7.2
7
7.9
7.7
8.7
8.5
9.6
9.4
10.6
10.4
11.6
11.4
12.7
12.4
14.1
13.8
15.6
15.3
17.1
16.8
19.1
18.8
21.2
20.8
23.3
22.8
25.6
25.1
28.9
28
32
31
35
34
38
37
41
40
46
44
50
48
54
52
60
58
66
64
72
70
79
Dynamic resistance
R
ZJT
at I
ZT
f = 1 KH
Z
R
ZJK
at I
ZK
f = 1 KH
Z
Ω
< 85
< 85
< 85
< 85
< 85
< 85
< 75
< 60
< 35
< 25
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
Test current
I
ZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
Temperature
Coefficient
TK
VZ
%/K
Min.
Max.
- 0.09
- 0.06
- 0.09
- 0.06
- 0.08
- 0.05
- 0.08
- 0.05
- 0.08
- 0.05
- 0.08
- 0.05
- 0.06
- 0.03
- 0.05
0.02
- 0.02
0.02
- 0.05
0.05
0.03
0.06
0.03
0.07
0.03
0.07
0.03
0.08
0.03
0.09
0.03
0.1
0.03
0.11
0.03
0.11
0.03
0.11
0.03
0.11
0.03
0.11
0.03
0.11
0.03
0.11
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
Test current
Reverse leakage current
I
ZK
I
R
at
I
R
at
T
amb
=25
℃
T
amb
=150
℃
at V
R
mA
μ
A
V
1
< 50
< 100
1
1
< 10
< 50
1
1
<4
< 40
1
1
<2
< 40
1
1
<2
< 40
1
1
<2
< 40
1
1
<1
< 20
1
1
< 0.5
< 10
1
1
< 0.1
<2
1
1
< 0.1
<2
1
1
< 0.1
<2
2
1
< 0.1
<2
3
1
< 0.1
<2
5
1
< 0.1
<2
6.2
1
< 0.1
<2
6.8
1
< 0.1
<2
7.5
1
< 0.1
<2
8.2
1
< 0.1
<2
9.1
1
< 0.1
<2
10
1
< 0.1
<2
11
1
< 0.1
<2
12
1
< 0.1
<2
13
1
< 0.1
<2
15
1
< 0.1
<2
16
1
< 0.1
<2
18
1
< 0.1
<2
20
1
< 0.1
<2
22
1
< 0.1
<2
24
1
< 0.1
<2
27
0.5
< 0.1
<5
30
0.5
< 0.1
<5
33
0.5
< 0.1
<5
36
0.5
< 0.1
< 10
39
0.5
< 0.1
< 10
43
0.5
< 0.1
< 10
47
0.5
< 0.1
< 10
51
0.5
< 0.1
< 10
56
H
igh Diode Semiconductor
2
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