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ST7FLITE20(2003) Ver la hoja de datos (PDF) - STMicroelectronics

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ST7FLITE20 Datasheet PDF : 131 Pages
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ST7LITE2
FLASH PROGRAM MEMORY (Cont’d)
4.5 Memory Protection
There are two different types of memory protec-
tion: Read Out Protection and Write/Erase Protec-
tion which can be applied individually.
4.5.1 Read out Protection
Read out protection, when selected, makes it im-
possible to extract the memory content from the
microcontroller, thus preventing piracy. Both pro-
gram and data E2 memory are protected.
In flash devices, this protection is removed by re-
programming the option. In this case, both pro-
gram and data E2 memory are automatically
erased and the device can be reprogrammed.
Read-out protection selection depends on the de-
vice type:
– In Flash devices it is enabled and removed
through the FMP_R bit in the option byte.
– In ROM devices it is enabled by mask option
specified in the Option List.
4.5.2 Flash Write/Erase Protection
Write/erase protection, when set, makes it impos-
sible to both overwrite and erase program memo-
ry. It does not apply to E2 data. Its purpose is to
provide advanced security to applications and pre-
vent any change being made to the memory con-
tent.
Warning: Once set, Write/erase protection can
never be removed. A write-protected flash device
is no longer reprogrammable.
Write/erase protection is enabled through the
FMP_W bit in the option byte.
4.6 Related Documentation
For details on Flash programming and ICC proto-
col, refer to the ST7 Flash Programming Refer-
ence Manual and to the ST7 ICC Protocol Refer-
ence Manual.
4.7 Register Description
FLASH CONTROL/STATUS REGISTER (FCSR)
Read /Write
Reset Value: 000 0000 (00h)
1st RASS Key: 0101 0110 (56h)
2nd RASS Key: 1010 1110 (AEh)
7
0
0
0
0
0
0 OPT LAT PGM
Note: This register is reserved for programming
using ICP, IAP or other programming methods. It
controls the XFlash programming and erasing op-
erations.
When an EPB or another programming tool is
used (in socket or ICP mode), the RASS keys are
sent automatically.
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