MBR30H90PT-E3/4W Ver la hoja de datos (PDF) - Vishay Semiconductors
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MBR30H90PT-E3/4W Datasheet PDF : 5 Pages
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MBR30H90PT, MBR30H100PT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL TEST CONDITIONS MBR30H90PT MBR30H100PT
IF = 15 A TJ = 25 °C
0.82
Maximum instantaneous forward voltage
per diode
VF (1)
IF = 15 A TJ = 125 °C
IF = 30 A TJ = 25 °C
0.67
0.93
IF = 30 A TJ = 125 °C
0.80
Maximum instantaneous reverse current at
rated DC blocking voltage per diode
IR (1)
TJ = 25 °C
TJ = 125 °C
5.0
6.0
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR30H90PT
Thermal resistance, junction to case per diode
RJC
MBR30H100PT
1.6
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-247AD
MBR30H100PT-E3/4W
6.13
PACKAGE CODE
45
BASE QUANTITY
30/tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
DELIVERY MODE
Tube
35
30
25
20
15
10
5
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Derating Curve
100
10
TJ = 175 °C
TJ = 150 °C
1
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 25 °C
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Fig. 2 - Typical Instantaneous Forward Characteristics Per Diode
Revision: 09-Aug-13
2
Document Number: 88678
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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