MBR30H90PT-E3/4W(2020) Ver la hoja de datos (PDF) - Vishay Semiconductors

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componentes Descripción

Fabricante

MBR30H90PT-E3/4W
(Rev.:2020)

Dual Common Cathode High Voltage Schottky Rectifier

Vishay Semiconductors 

www.vishay.com

MBR30H90PT, MBR30H100PT

Vishay General Semiconductor

Dual Common Cathode High Voltage Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

3

2

1

TO-3P (TO-247AD)

PIN 1

PIN 3

PIN 2

CASE

PRIMARY CHARACTERISTICS

IF(AV)

VRRM

IFSM

VF

IR

TJ max.

Package

2 x 15 A

90 V, 100 V

265 A

0.67 V

5.0 μA

175 °C

TO-3P (TO-247AD)

Circuit configuration

Common cathode

FEATURES

• Power pack

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

• Solder dip 275 °C max., 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of switching

mode power supplies, freewheeling diodes, DC/DC

converters, or polarity protection application.

MECHANICAL DATA

Case: TO-3P (TO-247AD)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: as marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

Maximum repetitive peak reverse voltage

Working peak reverse voltage

VRRM

VRWM

Maximum DC blocking voltage

Maximum average forward rectified current

total device

per diode

VDC

IF(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

IFSM

Peak repetitive reverse surge current at tp = 2 μs, 1 kHz 

per diode

IRRM

Non-repetitve avalanche energy (IAS = 0.5 A, L = 60 mH)

per diode

EAS

Voltage rate of change (rated VR)

Operating junction and storage temperature range

dV/dt

TJ, TSTG

MBR30H90PT MBR30H100PT

90

100

90

100

90

100

30

15

265

1.0

7.5

10 000

-65 to +175

UNIT

V

V

V

A

A

A

mJ

V/μs

°C

Revision: 27-May-2020

1

Document Number: 88678

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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