IXFE50N50 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFE50N50 Datasheet PDF : 2 Pages
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Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
VDS = 10 V; ID = IT, Note 2
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
RG = 1 Ω (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Characteristic Values
Min. Typ. Max.
45
S
9400
pF
1200
pF
460
pF
45
ns
60
ns
120
ns
45
ns
330
nC
55
nC
185
nC
0.25 K/W
0.07
K/W
IXFE 55N50
IXFE 50N50
ISOPLUS-227 B
Source-Drain Diode
(TJ = 25°C, unless otherwise specified)
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
IS
VGS = 0
55N50
50N50
55 A
50 A
ISM
Repetitive;
pulse width limited by TJM
55N50
50N50
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
220 A
200 A
1.3
V
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V TJ = 25°C 180
ns
TJ = 25°C 30
ns
QRM
TJ = 25°C
2
µC
IRM
8
A
Notes:
1. Pulse width limited by TJM.
2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%.
3. ITTest current:
IXFE55N50: IT = 27.5 A
IXFE50N50: IT = 25 A
Please see IXFN55N50 data sheet
for characteristic curves.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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