IXFN280N07 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFN280N07 Datasheet PDF : 4 Pages
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HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated
High dV/dt, Low trr
IXFN280N07
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IL(RMS)
IDM
IAR
EAR
EAS
dV/dt
PD
TJ
TJM
Tstg
T
L
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
Terminal current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s
50/60Hz, RMS
IISOL ≤ 1mA
t = 1min
t = 1s
Mounting torque
Terminal connection torque
Maximum Ratings
70
V
70
V
±20
V
±30
V
280
A
100
A
1120
A
180
A
60
mJ
3
J
20
V/ns
600
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
3000
V~
1.5/13
1.3/ 11.5
Nm/lb.in.
Nm/lb.in.
30
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 120A, Note 1
Characteristic Values
Min. Typ. Max.
70
V
2.0
4.0
V
±200 nA
100 μA
2 mA
5 mΩ
VDSS =
ID25 =
≤ RDS(on)
trr
≤
70V
280A
5mΩ
250ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
z International standard package
z miniBLOC with Aluminium nitride
isolation
z Low RDS(on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Unclamped inductive switching (UIS)
rated
z Low package inductance
z Fast intrinsic Rectifier
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z DC-DC converters
z Synchronous rectification
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z Temperature and lighting controls
z Low voltage relays
© 2008 IXYS Corporation, All rights reserved
DS98555C(4/08)
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