IRF1324S-7PPbF
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
๏V(BR)DSS/๏TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
24 โโโ โโโ V VGS = 0V, ID = 250ยตA
โโโ 0.023 โโโ V/ยฐC Reference to 25ยฐC, ID = 5mA ๏
โโโ 0.80 1.0 m๏๏ VGS = 10V, ID = 160A ๏
๏
VGS(th)
IDSS
IGSS
RG
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
2.0 โโโ 4.0 V VDS = VGS, ID = 250ยตA
โโโ
โโโ
โโโ
โโโ
20
250
ยตA
VDS =24V, VGS = 0V
VDS =19V,VGS = 0V,TJ =125ยฐC
โโโ
โโโ
โโโ 200
โโโ -200
nA
VGS = 20V
VGS = -20V
โโโ 3.0 โโโ ๏๏
Dynamic Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Trans conductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
190 โโโ โโโ S VDS = 15V, ID = 160A
โโโ 180 252
ID = 75A
โโโ 47 โโโ
VDS = 12V
โโโ 58 โโโ nC VGS = 10V๏
โโโ 122 โโโ
โโโ 19 โโโ
โโโ 240 โโโ
โโโ 86 โโโ
โโโ 93 โโโ
โโโ 7700 โโโ
โโโ 3380 โโโ
VDD = 16V
ns
ID = 160A
RG= 2.7๏๏
VGS = 10V๏
VGS = 0V
VDS = 19V
โโโ 1930 โโโ pF ฦ = 1.0MHz, See Fig. 5
Coss eff.(ER)
Effective Output Capacitance (Energy Related) โโโ 4780 โโโ
VGS = 0V, VDS = 0V to 19V๏
Coss eff.(TR)
Effective Output Capacitance (Time Related)
โโโ 4970 โโโ
VGS = 0V, VDS = 0V to 19V๏
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)๏ ๏๏
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
โโโ
โโโ
โโโ 429๏
โโโ 1640
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
โโโ โโโ 1.3
โโโ 71 107
โโโ 74 110
V TJ = 25ยฐC,IS = 160A,VGS = 0V ๏
๏
ns
TJ = 25ยฐC
TJ = 125ยฐC
VDD = 20V
IF = 160A,
โโโ
โโโ
83
92
120
140
nC
TJ = 25ยฐC
TJ = 125ยฐC
di/dt = 100A/ยตs ๏
๏ ๏
โโโ 2.0 โโโ A TJ = 25ยฐC ๏
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:๏
๏ Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)
๏ Repetitive rating; pulse width limited by max. junction temperature.
๏ Limited by TJmax, starting TJ = 25ยฐC, L = 0.018mH, RG = 25๏, IAS = 160A, VGS =10V. Part not recommended for use above
this value.
๏ ISD ๏ฃ๏ 160A, di/dt ๏ฃ๏ 600A/ยตs, VDD ๏ฃ๏ V(BR)DSS, TJ ๏ฃ 175ยฐC.
๏
Pulse width ๏ฃ๏ 400ยตs; duty cycle ๏ฃ 2%.
๏ Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
๏ Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
๏ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
๏ R๏ฑ is measured at TJ approximately 90ยฐC.
2
2015-10-15