DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

FL7930CMX-G Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
FL7930CMX-G Datasheet PDF : 22 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
The auxiliary winding voltage is used to check the boost
inductor current zero instance. When boost inductor
current becomes zero, there is a resonance between
boost inductor and all capacitors at the MOSFET drain
pin: including COSS of the MOSFET; an external
capacitor at the D-S pin to reduce the voltage rising and
falling slope of the MOSFET; a parasitic capacitor at
inductor; and so on to improve performance. Resonated
voltage is reflected to the auxiliary winding and can be
used for detecting zero current of boost inductor and
valley position of MOSFET voltage stress. For valley
detection, a minor delay by the resistor and capacitor is
needed. A capacitor increases the noise immunity at the
ZCD pin. If ZCD voltage is higher than 1.5 V, an internal
ZCD comparator output becomes HIGH and LOW when
the ZCD goes below 1.4 V. At the falling edge of
comparator output, internal logic turns on the MOSFET
VDS
VOUTPFC - VIN
VOUTPFC - VIN
VIN
IINDUCTOR
Figure 30. Restart Timer at Startup
Because the MOSFET turn-on depends on the ZCD
input, switching frequency may increase to higher than
several megahertz due to the mis-triggering or noise on
the nearby ZCD pin. If the switching frequency is higher
than needed for critical conduction mode (CRM),
operation mode shifts to continuous conduction mode
(CCM). In CCM, unlike CRM where the boost inductor
current is reset to zero at the next switch on; inductor
current builds up at every switching cycle and can be
raised to very high current that exceeds the current
rating of the power switch or diode. This can seriously
damage the power switch. To avoid this, maximum
switching frequency limitation is embedded. If ZCD
signal is applied again within 3.3 µs after the previous
rising edge of gate signal, this signal is ignored
internally and FL7930C waits for another ZCD signal.
This slightly degrades the power factor performance at
light load and high input voltage.
ZCD after COMPARATOR
Ignores ZCD noise
MOSFET Gate
Error occurs!
VZCD
IMOSFET
IDIODE
1.5V
1.4V
MOSFET gate
150ns Delay
ON
Figure 29.
ON
FL7930 Rev.00
t
Auxiliary Voltage Threshold
When no ZCD signal is available, the PFC controller
cannot turn on the MOSFET, so the controller checks
every switching off time and forces MOSFET turn on
when the off time is longer than 150 µs. This restart
timer triggers MOSFET turn-on at startup and may be
used at the input voltage zero-cross period.
VOUT
VIN
VCC
tRESTART
150 µs
MOSFET gate
ZCD after COMPARATOR
FL7930 Rev.00
t
Max. fSW Limit
Figure 31.
Inhibit Region
FL7930 Rev.00
t
Maximum Switching Frequency
Limit Operation
5. Control: The scaled output is compared with the
internal reference voltage and sinking or sourcing
current is generated from the COMP pin by the
transconductance amplifier. The error amplifier output is
compared with the internal sawtooth waveform to give
proper turn-on time based on the controller.
VOUTPFC
6.2V
INV
1
COMP
3
THD-Optimized
Sawtooth
Generator
1V
Sawtooth
-
VREF
Stair +
Step
+
-
Clamp
Circuit
MOSFET Off
C2
R1
C1
FL7930 Rev.00
Figure 32. Control Circuit
Unlike a conventional voltage-mode PWM controller,
FL7930C turns on the MOSFET at the falling edge of
ZCD signal. The “ON” instant is determined by the
external signal and the turn-on time lasts until the error
amplifier output (VCOMP) and sawtooth waveform meet.
When load is heavy, output voltage decreases, scaled
output decreases, COMP voltage increases to
compensate low output, turn-on time lengthens to give
more inductor turn-on time, and increased inductor
www.onsemi.com
13

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]