NXP Semiconductors
BF1107
N-channel single gate MOSFET
0
Lins(on)
(dB)
−1
−2
001aaf760
(2)
(1)
0
ISLoff
(dB)
−20
001aaf780
−3
−4
−5
10
102
103
f (MHz)
(1) RS = RL = 50 Ω
(2) RS = RL = 75 Ω
VSG = VDG = 0 V
Fig 1. On-state insertion loss as a function of
frequency; typical values
0
RLin; RLout
(dB)
−5
−40
(2)
(1)
−60
10
102
103
f (MHz)
(1) RS = RL = 50 Ω
(2) RS = RL = 75 Ω
VSG = VDG = 5 V
Fig 2. Off-state isolation as a function of frequency;
typical values
001aaf781
−10
−15
(1)
−20
(2)
−25
10
102
103
f (MHz)
(1) RS = RL = 50 Ω
(2) RS = RL = 75 Ω
VSG = VDG = 0 V
Fig 3. Input and output return loss (on-state) as a function of frequency; typical values
BF1107_4
Product data sheet
Rev. 04 — 9 January 2007
© NXP B.V. 2007. All rights reserved.
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