MMDF4C03HD
12
11
QT
10
9.0
8.0
30
VGS
20
7.0 Q1
6.0
5.0
4.0
3.0
2.0
1.0
Q3
0
0 2.0
Q2
ID = 5 A
10
TJ = 25_C
VDS
0
4.0 6.0 8.0 10 12 14 16
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
7.0
QT
6.0
5.0
4.0 Q1
Q2
30
VGS
20
3.0
2.0
ID = 3 A
10
TJ = 25_C
1.0
Q3
VDS
0
0
0 2.0 4.0 6.0 8.0 10 12 14 16
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000
VDD = 15 V, ID = 6 A
VGS = 10 V, TJ = 25_C
100
td(off)
tf
tr
10
td(on)
1000
100
VDD = 15 V, ID = 3 A
VGS = 10 V, TJ = 25_C
td(off)
tf
tr
10
td(on)
1.0
1.0
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
1.0
1.0
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
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