1N60F Ver la hoja de datos (PDF) - Nell Semiconductor Co., Ltd
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1N60F Datasheet PDF : 8 Pages
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SEMICONDUCTOR
1N60 Series RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
OFF CHARACTERISTICS
V(BR)DSS
Drain to source breakdown voltage
ID = 250µA, VGS = 0V
600
▲ ▲ V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 250µA, VDS = VGS
IDSS
Drain to source leakage current
VDS=600V, VGS=0V
VDS=480V, VGS=0V
TC = 25°C
TC=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
RDS(ON)
Static drain to source on-state resistance ID = 0.6A, VGS = 10V
VGS(TH)
Gate threshold voltage
VGS=VDS, ID=250μA
2.0
DYNAMIC CHARACTERISTICS
CISS
COSS
Input capacitance
Output capacitance
VDS = 25V, VGS = 0V, f =1MHz
CRSS
Reverse transfer capacitance
SWITCHING CHARACTERISTICS
td(ON)
Turn-on delay time
tr
td(OFF)
Rise time
Turn-off delay time
VDD = 300V, VGS = 10V,
ID = 1.2A, RGS = 50Ω(Note 1, 2)
tf
Fall time
QG
QGS
QGD
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
VDD = 480V, VGS = 10V, ID = 1.2A
(Note 1, 2)
Typ.
0.4
9.5
120
20
3.0
5
25
7
25
5.0
1.0
2.5
Max. UNIT
V
V/ºC
10
μA
100
100
nA
-100
11.5 Ω
4.0 V
150
25 pF
4.0
20
60
ns
25
60
6.0
nC
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD
Diode forward voltage
ISD = 1.2A, VGS = 0V
1.4
V
Is (IsD)
Continuous source to drain current
Integral reverse P-N junction
1.2
diode in the MOSFET
D (Drain)
ISM
Pulsed source current
trr
Reverse recovery time
Qrr
Reverse recovery charge
Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
G
(Gate)
S (Source)
ISD = 1.2A, VGS = 0V,
dIF/dt = 100A/µs
A
4.8
160
ns
0.3
μC
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