2SD880 Ver la hoja de datos (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Número de pieza

componentes Descripción

Fabricante

2SD880

Silicon NPN transistor in a TO-220 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SD880

Rev.F Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Base Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

PC(TC=25℃ )

Tj

Tstg

数值

Rating

60

60

7.0

3.0

0.5

1.5

30

150

-55～150

单位

Unit

V

V

V

A

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Emitter Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation

Voltage

Base to Emitter Voltage

Transition Frequency

Turn-On Time

Turn-On Time

Storage Time

Fall Time

符号

Symbol

VCEO

ICBO

IEBO

hFE

VCE(sat)

VBE

fT

Cob

ton

tstg

tf

测试条件

Test Conditions

IC=50mA IB=0

VCB=60V

VEB=7.0V

VCE=5.0V

IE=0

IC=0

IC=0.5A

IC=3.0A

IB=0.3A

VCE=5.0V

VCE=5.0V

VCB=10V

f=1.0MHz

IC=0.5A

IC=0.5A

IE=0

IB1=-IB2=0.2A

最小值 典型值 最大值 单位

Min Typ Max Unit

60

V

100 μA

100 μA

60

300

0.25 1.0 V

0.7 1.0 V

3.0

MHz

70

pF

0.8

μS

1.5

μS

0.8

μS

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