DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MC33264D-4.75 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
MC33264D-4.75 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
MC33264
ELECTRICAL CHARACTERISTICS (continued) (Vin = 6.0 V, IO = 10 mA, CO = 1.0 μF, TJ = 25°C (Note 1), unless otherwise noted.)
CL = 100 μF
Characteristic
Symbol
Min
Typ
Max
Unit
46
NOTES: 1. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
2. Quiescent current is measured where the PNP pass transistor is in saturation. VCE = 0.5 V guarantees this condition.
3. Noise tests on the MC33264 are made with a 0.01 μF capacitor connected across Pins 8 and 5.
http://onsemi.com
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]