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MTSF2P03HD Datasheet PDF : 12 Pages
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MTSF2P03HD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(Cpk ≥ 2.0)
(Notes 2. & 4.)
V(BR)DSS
(VGS = 0 Vdc, ID = 0.25 mAdc)
30
Temperature Coefficient (Positive)
−
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(Cpk ≥ 2.0)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Notes 2. & 4.)
IDSS
−
−
IGSS
−
VGS(th)
1.0
−
Static Drain−to−Source On−Resistance (Cpk ≥ 2.0) (Notes 2. & 4.)
RDS(on)
(VGS = 10 Vdc, ID = 2.4 Adc)
−
(VGS = 4.5 Vdc, ID = 1.2 Adc)
−
Forward Transconductance (VDS = 15 Vdc, ID = 1.2 Adc)
(Note 2.)
gFS
2.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
−
Coss
−
Crss
−
SWITCHING CHARACTERISTICS (Note 3.)
Turn−On Delay Time
td(on)
−
Rise Time
Turn−Off Delay Time
(VDS = 15 Vdc, ID = 2.4 Adc,
tr
−
VGS = 10 Vdc, RG = 6.0 Ω) (Note 2.)
td(off)
−
Fall Time
tf
−
Turn−On Delay Time
td(on)
−
Rise Time
Turn−Off Delay Time
(VDD = 15 Vdc, ID = 1.2 Adc,
tr
−
VGS = 4.5 Vdc, RG = 6.0 Ω) (Note 2.)
td(off)
−
Fall Time
tf
−
Gate Charge
QT
−
(VDS = 24 Vdc, ID = 2.4 Adc,
VGS = 10 Vdc) (Note 2.)
Q1
−
Q2
−
Q3
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 2.4 Adc, VGS = 0 Vdc) (Note 2.)
VSD
(IS = 2.4 Adc, VGS = 0 Vdc,
−
TJ = 125°C)
−
Reverse Recovery Time
trr
−
(IS = 2.4 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (Note 2.)
ta
−
tb
−
Reverse Recovery Stored Charge
QRR
−
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.
Max limit − Typ
Cpk =
3 x SIGMA
Typ
−
30
−
−
−
1.9
3.8
70
110
3.1
450
220
70
12
58
30
50
19
39
35
37
16.6
1.6
5.4
4.4
0.9
0.7
32
21
11
0.036
Max
Unit
Vdc
−
−
mV/°C
µAdc
1.0
25
100
nAdc
Vdc
3.0
−
mV/°C
mΩ
90
150
−
Mhos
−
pF
−
−
−
ns
−
−
−
−
−
−
−
23
nC
−
−
−
Vdc
1.3
−
−
ns
−
−
−
µC
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