MMBR911L Ver la hoja de datos (PDF) - Inchange Semiconductor
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MMBR911L Datasheet PDF : 5 Pages
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR911L
DESCRIPTION
·High Gain
GNF = 17 dB TYP. @ IC= 10 mA, f = 500 MHz
·Low Noise Figure
NF= 1.7dB TYP. @ f= 500 MHz
·High Current-Gain Bandwidth Product
fT = 6.0 GHz TYP. @ IC= 30 mA
APPLICATIONS
·Designed for low noise, wide dynamic range front-end
amplifiers and low-noise VCO’S.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
12
V
VEBO Emitter-Base Voltage
2
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@TC= 75℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
60
mA
0.333
W
150
℃
-55~150
℃
isc website：www.iscsemi.cn
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