4N30ZG-TN3-T Ver la hoja de datos (PDF) - Unisonic Technologies
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4N30ZG-TN3-T Datasheet PDF : 3 Pages
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4N30Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
300
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
4
A
Avalanche Current
IAR
4
A
Avalanche Energy
Single Pulsed
EAS
Repetitive
EAR
52
mJ
52
mJ
Power Dissipation
PD
1.14
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VDS=0V
Drain-Source Leakage Current
IDSS
VDS=300V
Forward
Gate-Source Leakage Current
Reverse
IGSS
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=4A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VDD=50V, ID=4A, IG=100µA,
VGS=10V
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=30V, ID=4A, RG=25Ω,
VGS=0~10V
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=4A
MIN TYP MAX UNIT
300
V
1 µA
±10 µA
±10 µA
2
4V
2Ω
850 pF
250 pF
200 pF
3.2
nC
0.64
nC
1.6
nC
6
ns
38
ns
11
ns
13
ns
4A
16 A
0.1
1.48 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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