B1017 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
B1017 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
io ucti, One.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1017
DESCRIPTION
• Low Collector Saturation Voltage-
:VCE(sa.)=-1.7V(Max)@lc=-3A
• Good Linearity of hFE
• Complement to Type 2SD1 408
APPLICATIONS
• Designed for power amplifier applications.
• Recommended for 20-25W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VOEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-4
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25"C
PC
Collector Power Dissipation
@ TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-0.4
A
2
W
25
150
•c
-55-150
r
^^
2
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HI
12 3
PIM: 1 Base
2 Collector
3 Emitter
TO-220F* package
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DIM MIN MAX
A 16.85 17.15
B 9.54 10.10
C 4.35 4.65
D 0.75 0.90
F 3.20 3.40
G 6.90 7.20
H 5.15 5.45
J 0.45 0.75
K 13.35 13.65
L 1.10 1.30
N 4.93 5.18
Q 4.35 5.15
R 2.65 3.25
S 2.70 2.90
u 1.75 2.05
V 1.30 1.50
N.I Semi-Conductors reserves the right to change test conditions, parameter l i m i t s and package dimensions \\ithout
notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going
lo press. I louever. NJ Semi-Conductors assumes no responsibility for any errors or omissionsdiscovered in itsuse.
N.I Semi-Cimdnctors enauini.ucs customers to verily that datasheets are current before placing orders.
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