SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC=2A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V (Min)
·High Switching Speed
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Pulse
12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
2
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3830
SPTECH website:www.superic-tech.com
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