STD3NA50T4 Ver la hoja de datos (PDF) - STMicroelectronics

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STD3NA50T4

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STMicroelectronics 

STD3NA50

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE

STD3NA50

VDSS

500 V

R DS( on)

<3Ω

ID

2.7 A

s TYPICAL RDS(on) = 2.4 Ω

s AVALANCHE RUGGED TECHNOLOGY

s 100% AVALANCHE TESTED

s REPETITIVE AVALANCHE DATA AT 100oC

s APPLICATION ORIENTED

CHARACTERIZATION

s THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

s SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

APPLICATIONS

s HIGH SPEED SWITCHING

s UNINTERRUPTIBLE POWER SUPPLY (UPS)

s MOTOR CONTROL, AUDIO AMPLIFIERS

s INDUSTRIAL ACTUATORS

s DC-DC & DC-AC CONVERTERS FOR

TELECOM, INDUSTRIAL AND CONSUMER

ENVIRONMENT

s PARTICULARLY SUITABLE FOR

ELECTRONIC FLUORESCENT LAMP

BALLASTS

3

2

1

IPAK

TO-251

(Suffix ”-1”)

3

1

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

P ar amete r

VD S Drain-source Voltage (VGS = 0)

VDG R Drain- gate Voltage (RGS = 20 kΩ)

VGS Gate-source Voltage

ID

Drain Current (continuous) at T c = 25 oC

ID

Drain Current (continuous) at T c = 100 oC

ID M(•)

Ptot

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

November 1996

Value

500

500

± 30

2.7

1.7

10.8

50

0.4

-65 to 150

150

Unit

V

V

V

A

A

A

W

W /o C

oC

oC

1/10

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