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DS1265AB-70 Ver la hoja de datos (PDF) - Maxim Integrated

Número de pieza
componentes Descripción
Fabricante
DS1265AB-70
MaximIC
Maxim Integrated MaximIC
DS1265AB-70 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
19-5616; Rev 11/10
www.maxim-ic.com
DS1265Y/AB
8M Nonvolatile SRAM
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Unlimited write cycles
Low-power CMOS operation
Read and write access times of 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Full ±10% VCC operating range (DS1265Y)
Optional ±5% VCC operating range
(DS1265AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
PIN ASSIGNMENT
NC 1
NC 2
A18 3
A16 4
A14 5
A12 6
A7 7
A6 8
A5 9
A4 10
A3 11
A2 12
A1 13
A0 14
DQ0 15
DQ1 16
DQ2 17
GND 18
36
VCC
35 A19
34 NC
33 A15
32 A17
31 WE
30 A13
29 A8
28
A9
27 A11
26 OE
25 A10
24
CE
23
DQ7
22 DQ6
21 DQ5
20
DQ4
19
DQ3
36-Pin ENCAPSULATED PACKAGE
740-mil EXTENDED
PIN DESCRIPTION
A0 - A19
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE
- Chip Enable
WE
- Write Enable
OE
- Output Enable
VCC
GND
- Power (+5V)
- Ground
NC
- No Connect
DESCRIPTION
The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as
1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs,
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. There is no limit on the number of write cycles which can be executed and no
additional support circuitry is required for microprocessor interfacing.
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