AP2012P3C-P22 Ver la hoja de datos (PDF) - Kingbright

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Fabricante

AP2012P3C-P22

2.0 x 1.25 mm Phototransistor

Kingbright 

AP2012P3C-P22

2.0 x 1.25 mm Phototransistor

DESCRIPTION

z Made with NPN silicon phototransistor chips

PACKAGE DIMENSIONS

FEATURES

z 2.0 mm x 1.25 mm SMD LED, 1.1 mm thickness

z Mechanically and spectrally matched to the infrared

emitting LED lamp

z Water clear lens

z Package: 2000 pcs / reel

z Moisture sensitivity level: 3

z RoHS compliant

l APPLICATIONS

ia z Infrared applied systems

z Optoelectronic switches

z Photodetector control circuits

Confident z Sensortechnology

RECOMMENDED SOLDERING PATTERN

(units : mm; tolerance : ± 0.1)

Notes:

1. All dimensions are in millimeters (inches).

2. Tolerance is ±0.1(0.004") unless otherwise noted.

3. The specifications, characteristics and technical data described in the datasheet are subject to

change without prior notice.

4. The device has a single mounting surface. The device must be mounted according to the specifications.

ABSOLUTE MAXIMUM RATINGS at TA=25°C

Parameter

Max.Ratings

Units

Collector-to-Emitter Voltage

30

Emitter-to-Collector Voltage

5

Power Dissipation at(or below) 25°C Free Air Temperature

100

Operating Temperature

-40 to +85

Storage Temperature

-40 to +85

Note:

1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033.

© 2017 Kingbright. All Rights Reserved. Spec No: DSAO8747 / 1203000140 Rev No: V.4 Date: 11/20/2017

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