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AL5802LPL Datasheet PDF : 11 Pages
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AL5802LPL
Electrical Characteristics – NPN Transistor – Q1 (@TA = +25°C, unless otherwise specified.)
Symbol
V(BR)CEO
V(BR)EBO
ICEX
IBL
hFE
VCE(SAT)
VBE(SAT)
VBE(ON)
Characteristic
Collector-Emitter Breakdown Voltage (Notes 8 & 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current (Note 9)
Base Cutoff Current (Note 9)
DC Current Gain
Collector-Emitter Saturation Voltage (Note 8)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Test Condition
IC = 1.0mA, IB = 0
IE = 10µA, IC = 0
VCE = 30V, VEB(OFF) = 3.0V
VCE = 30V, VEB(OFF) = 3.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 10mA, IB = 1.0mA
VCE = 1.50V, IC = 2.0mA
Min
Typ
Max Unit
40
—
—
V
6.0
—
—
V
—
—
50
nA
—
—
50
nA
70
100
—
—
—
300
—
—
—
0.20
V
0.65
—
0.85
V
0.30
—
1.10
V
Electrical Characteristics – NPN Pre-Biased Transistor – Q2 (@TA = +25°C, unless otherwise specified.)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
VBE(ON)
hFE
R1
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage (Note 9)
Collector Cutoff Current
Emitter Cutoff Current (Note 9)
Collector-Emitter Saturation Voltage (Note 8)
Base-Emitter Turn-On Voltage
DC Current Gain (Note 8)
Input Resistance
Test Condition
IC = 50μA, IE = 0
IC = 1mA, IB = 0
IE = 50μA, IC = 0
VCB = 30V, IE = 0
VEB = 4V, IC = 0
IC = 10mA, IB = 1mA
VCE = 5.0V, IC = 2.0mA
VCE = 5V, IC = 150mA
—
Min
Typ
Max
30
—
—
30
—
—
5.0
—
—
—
—
0.5
—
—
0.5
—
—
0.3
0.30
—
1.10
100
—
—
7
10
13
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design and tested only at the wafer level for single die. These parameters cannot be tested at the finished goods level due to
the testability of the device changed after packaging multiple dies to form an application circuit.
Unit
V
V
V
µA
µA
V
V
—
kΩ
AL5802LPL
Document number: DS38590 Rev. 3 - 2
4 of 11
www.diodes.com
April 2016
© Diodes Incorporated
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