MUBW30-12A6 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
MUBW30-12A6 Datasheet PDF : 8 Pages
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Brake Chopper T7, D7
Symbol
VCES
VCGR
VGE
IC
ICM
tSC
Ptot
TVJ
TVJ
Conditions
TVJ = 25°C
TVJ = 25°C; RGE = 20kW
TVJ = 25°C
TC = 25°C
TC = 90°C
tp = 1 ms = 1% duty cycle; TC = 25°C
TC = 90°C
VCE = 600 V; TVJ = 125°C
non-repetitive
TC = 25°C
Free-Wheeling Diode
IGBT
Maximum Ratings
1200
V
1200
V
±20
V
18
A
11.5
A
36
A
23
A
10
µs
70
W
+150
°C
+150
°C
Symbol
ICES
IGES
VGE(th)
V
(BR)CES
VCEsat
tf
tr
td(on)
td(off)
Eoff
Eon
Ciss
Coss
Crss
gfs
Qg
VF
trr
Q
r
I
r
RthJC
Conditions
Characteristic Values
(T
VJ
=
25°C,
unless
otherwise
specified)
min. typ. max.
VGE = 0 V; VCE = 1000 V
VCE = 0 V; VGE = 25 V
VGE = VCE; IC = 0.35 mA
V
GE
=
0
V;
I
C
=
10
mA;
TVJ
=
-40°C
VGE = 15 V; IC = 10 A; TVJ = 25°C
TVJ = 150°C
Inductive load, TVJ = 125°C
VCC = 600 V; IC = 8 A
RG = 100 W; VGE = ±15 V
500 µA
100 nA
4.5 5.5 6.5 V
1200
V
2.9 V
3.4 V
350
ns
40
ns
80
ns
420
ns
0.9
mJ
1.3
mJ
VGE = 0 V
V = 25 V
CE
f = 1 MHz
850
nF
98
nF
60
nF
VCE = 20 V; IC = 1.5 A
VCC = 1000 V; IC = 8 A pulse; VGE = 15 V
IF = 4 A; VGE = 0 V; TVJ = 25°C
TVJ = 100°C
IF = 4 A; VGE = 0 V; TVJ = 100°C
VR = -300 V; diF/dt = -800 A/µs
I
F
=
4
A;
V
GE
=
0
V;
TVJ
=
100°C
VR = -300 V; diF/dt = -800 A/µs
1.7
58
2.3
2
55
S
nC
3V
V
ns
0.8
µC
250 µA
IGBT
Diode
(per die)
(per die)
1.5
°C/W
2.25
°C/W
© 2000 IXYS All rights reserved
MUBW 30-12 A6
3-8
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