Philips Semiconductors
SMA ultra fast soft-recovery
controlled avalanche rectifiers
Product specification
BYG26 series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
trr
reverse recovery time
Cd
diode capacitance
CONDITIONS
IF = 1 A; see Fig.4
VR = VRRMmax; see Fig.5
VR = VRRMmax; Tj = 165 °C; see Fig.5
when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.9
VR = 4 V; f = 1 MHz; see Fig.6
TYP.
−
−
−
−
MAX.
3.6
5
100
30
UNIT
V
µA
µA
ns
7
−
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point; see Fig.7
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
VALUE
27
100
150
UNIT
K/W
K/W
K/W
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm. For more
information please refer to the ‘General Part of associated Handbook’.
2000 Feb 14
3