TIP514 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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Fabricante

TIP514

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0

VcE(sat)-i Collector-Emitter Saturation Voltage

lc= -2.5A; IB= -0.25A

VcE(sat)-2 Collector-Emitter Saturation Voltage

lc= -5A; IB= -0.5A

VeE(on) Base-Emitter On Voltage

lc= -5A; VCE= -4V

ICEO

Collector Cutoff Current

ICES

Collector Cutoff Current

IEBO

Emitter Cutoff Current

hpE-1

DC Current Gain

VCE= -75V; IB= 0

VCE=-150V;VBE=0

VCE= -75V; VaE= 0, TC=150'C

VEB= -2.5V; lc= 0

VEB= -5V; lc= 0

lc= -2.5A; VCE= -4V

hFE-2

DC Current Gain

lc= -5A; VCE= -4V

TIP514

MIN MAX UNIT

-150

V

-1.0

V

-2.0

V

-2.2

V

-0.3

mA

-1.0

-2.0

mA

-0.1

-1.0

mA

30

150

15

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