2N60 Ver la hoja de datos (PDF) - Unisonic Technologies
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2N60 Datasheet PDF : 7 Pages
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2N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
Avalanche Current (Note 2)
VGSS
±30
V
IAR
2.0
A
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
2.0
A
8.0
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
Repetitive (Note 2)
EAR
140
mJ
4.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/ TO-262
54
W
TO-220F/TO-220F1
TO-220F3
23
W
TO-220F2
24
W
Power Dissipation
(TC = 25°С)
TO-251/TO-251L
TO-251S/TO-251S2
PD
TO-251S4/TO-252
44
W
TO-252D
TO-126/TO-126C
40
W
DFN5060-8
22
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
PACKAGE
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3/TO-262
TO-251/TO-251L
TO-251S/TO-251S2
TO-251S4/TO-252
TO-252D
TO-126/TO-126C
DFN5060-8
TO-220/ TO-262
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/TO-251L
TO-251S/TO-251S2
TO-251S4/TO-252
TO-252D
TO-126/TO-126C
DFN5060-8
SYMBOL
θJA
θJC
RATINGS
62.5
100
89
75
2.32
5.5
5.43
2.87
3.12
5.6
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R502-053.AA
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