2N5871 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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componentes Descripción

Fabricante

2N5871

Silicon PNP Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -7A; IB= -1.4A

VBE(sat) Base-Emitter Saturation Voltage

IC= -7A; IB= -1.4A

ICEO

Collector Cutoff Current

VCE= -30V; IB= 0

ICBO

Collector Cutoff Current

VCB= -60V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -2.5A; VCE= -4V

hFE-2

DC Current Gain

IC= -7A; VCE= -4V

fT

Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V; ftest= 1.0MHz

2N5871

MIN MAX UNIT

-60

V

-1.0

V

-3.0

v

-2.5

V

-2.0

mA

-1.0

mA

-1.0

mA

20

100

4

4

MHz

SPTECH website：www.superic-tech.com

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