2N5871 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

2N5871

Silicon PNP Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= -1.0V(Max.)@ IC= -5A

·DC Current Gain-

: hFE= 20-100 @IC= -2.5A

APPLICATIONS

·Designed for general-purpose power amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-7

A

IB

Base Current-Continuous

-2

A

PC

Collector Power Dissipation@TC=25℃

115

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

1.17 ℃/W

SPTECH website：www.superic-tech.com

2N5871

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