SSF2306 Ver la hoja de datos (PDF) - GOOD-ARK
Número de pieza
componentes Descripción
Fabricante
SSF2306 Datasheet PDF : 4 Pages
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ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
SSF2306
30V N-Channel MOSFET
Min Typ Max
Unit
30
V
1
μA
±100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
0.5
1.2
V
VGS=2.5V, ID=2.6A
50
mΩ
VGS=4.5V, ID=5A
35
mΩ
VGS=10V, ID=5A
30
mΩ
VDS=5V,ID=5A
13
S
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS (Note 4)
VDS=25V,VGS=0V,
F=1.0MHz
660 1050
PF
90
PF
70
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
6
nS
tr
VDS=15V,ID=5A
20
nS
VGS=10V,RGEN=3.3Ω
td(off)
RD=3Ω
20
nS
tf
3
nS
Total Gate Charge
Gate-Source Charge
Qg
Qgs
VDS=16V,ID=5A,VGS=4.5V
8.5
15
nC
1.5
nC
Gate-Drain Charge
Qgd
DRAIN-SOURCE DIODE CHARACTERISTICS
3.2
nC
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.2A
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Rev.1.0
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