SC1480A Ver la hoja de datos (PDF) - Semtech Corporation

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Fabricante

SC1480A

DDR and DDR Memory VTT power Supply Controller

Semtech Corporation 

SC1480A

POWER MANAGEMENT

Electrical Characteristics Cont.

Test Conditions: VBAT = 2.5V, REFIN = 1.25, VCCA = VDDP = 5.0V, VOUT = 1.25V, RTON = 1MΩ

Parameter

Conditions

Min

Fault Protection (Cont.)

PGD Fault Delay

FB forced outside PGD

window

VCCA Under Voltage Threshold Falling (100mV hysteresis)

VDDP Under Voltage Threshold Falling

VDDP Under Voltage Hysteresis

Over Temperature Lockout

10°C Hysteresis

Soft Start

Soft-Start Ramp Time

Under-Voltage Blank Time

Gate Drivers

REFIN high to PGD high

REFIN high to UV high

Shoot-Through Delay(6)

DL Pull-Down Resistance

DH or DL rising

DL low

DL Pull-Up Resistance

DL high

DH Pull-Down Resistance

DH low, BST - LX = 5V

DH Pull-Up Resistance(7)

DH high, BST - LX = 5V

DL Sink Current

DL Source Current

DH Sink/Source Current

VDL = 2.5V

VDL = 2.5V

VDH = 2.5V

25°C

Typ

5

4.0

3.5

250

165

440

440

30

0.8

2

2

2

3.1

1.3

1.3

-40°C to 125°C Units

Max Min Max

µs

3.7

4.3

V

V

mV

C

clks(5)

clks(5)

ns

1.6

Ω

4

Ω

4

Ω

4

Ω

A

A

A

Notes:

(1) The output voltage will have a DC regulation level higher than the error-comparator threshold by 50% of the

ripple voltage.

(2) Using a current sense resistor, this measurement relates to PGND minus the voltage of the source on the

low-side MOS.ET.

(3) This device is ESD sensitive. Use of ESD handling precautions is required.

(4) Measured in accordance with JESD51-1, JESD51-2 and JESD51-7.

(5) clks = switching cycles.

(6) Guaranteed by design. Please see Shoot-Through Delay Timing Diagram on Page 5.

(7) Semtech’s SmartDriverTM .ET drive first pulls DH high with a pull-up resistance of 10Ω (typ.) until LX = 1.5V (typ.).

At this point, an additional pull-up device is activated, reducing the resistance to 2Ω (typ.).

 2003 Semtech Corp.

4

www.semtech.com

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