BAW56SRA Ver la hoja de datos (PDF) - NXP Semiconductors.
Número de pieza
componentes Descripción
Fabricante
BAW56SRA Datasheet PDF : 11 Pages
| |||
Nexperia
BAW56SRA
Quad high-speed switching diodes
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Per diode
VF
forward voltage
IR
reverse current
Cd
trr
VFRM
diode capacitance
reverse recovery time
peak forward recovery
voltage
Conditions
IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 150 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
VR = 25 V; pulsed; Tj = 25 °C
VR = 80 V; pulsed; Tj = 25 °C
VR = 25 V; pulsed; Tj = 150 °C
VR = 80 V; pulsed; Tj = 150 °C
VR = 0 V; f = 1 MHz; Tj = 25 °C
IF = 10 mA; IR = 10 mA; RL = 100 Ω;
IR(meas) = 1 mA; Tamb = 25 °C
IF = 10 mA; tr = 20 ns
Min Typ Max Unit
-
-
715 mV
-
-
855 mV
-
-
1
V
-
-
1.25 V
-
-
30
nA
-
-
0.5 µA
-
-
30
µA
-
-
150 µA
-
-
2
pF
-
-
4
ns
-
-
1.75 V
1
IF
(A)
10-1
10-2
10-3
(1)
(2)
(3) (4)
aaa-020906
10-4
0.0
0.5
1.0
1.5
2.0
VF (V)
(1) Tj = 150 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = −40 °C
Fig. 4. Forward current as a function of forward
voltage; typical values
10-3
IR
(A) 10-4
10-5
aaa-020907
(1)
(2)
10-6
(3)
10-7
(4)
10-8
10-9
10-10
(5)
10-11
0
20
40
60
80
100
VR (V)
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
Fig. 5. Reverse current as a function of reverse
voltage; typical values
BAW56SRA
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 September 2018
© Nexperia B.V. 2018. All rights reserved
5 / 11
Share Link: 