AT-42036 Ver la hoja de datos (PDF) - Avago Technologies

Número de pieza

componentes Descripción

Fabricante

AT-42036

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Avago Technologies 

AT-42036 Absolute Maximum Ratings[1]

Symbol

Parameter

Units

VEBO

Emitter-Base Voltage

V

VCBO

VCEO

IC

PT

Tj

TSTG

Collector-Base Voltage

V

Collector-Emitter Voltage V

Collector Current

mA

Power Dissipation[2,3]

mW

Junction Temperature

°C

Storage Temperature[4]

°C

Absolute Maximum

1.5

20

12

80

600

150

-65 to 150

Thermal Resistance[2,5]:

θ jc = 175°C/W

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. Tcase = 25°C.

3. Derate at 5.7 mW/°C for Tc > 95°C.

4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into

a circuit.

5. The small spot size of this technique results in a higher, though more accurate determination

of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more

information.

Electrical Specifications

TA = 25°C

Symbol

Parameters and Test Conditions[1]

Frequency

Units

Min.

Typ.

Max.

|S21E|2

Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz

dB

10.0

11.0

f = 4.0 GHz

5.0

P1 dB

Power Output @ 1 dB Gain Compression f = 2.0 GHz

dBm

21.0

VCE = 8 V, IC = 35 mA

f = 4.0 GHz

20.5

G1 dB

1 dB Compressed Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz

dB

14.0

f = 4.0 GHz

9.5

NFO

Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz

dB

2.0

f = 4.0 GHz

3.0

GA

Gain @ NFO; VCE = 8 V, IC = 10 mA

f = 2.0 GHz

dB

13.5

f = 4.0 GHz

10.0

fT

Gain Bandwidth Product: VCE = 8 V, IC = 35 mA

GHz

8.0

hFE

Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA

—

30

150

270

ICBO

Collector Cutoff Current; VCB = 8 V

µA

0.2

IEBO

Emitter Cutoff Current; VEB = 1 V

µA

2.0

CCB

Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz

pF

0.28

Note:

1. For this test, the emitter is grounded.



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