AFP02N8-000 Ver la hoja de datos (PDF) - Alpha Industries

Número de pieza

componentes Descripción

Fabricante

AFP02N8-000

General Purpose PHEMT Chip

Alpha Industries 

General Purpose PHEMT Chip

Features

s Low Noise Figure, 1.25 dB @ 4 GHz

s High Associated Gain, 15.0 dB @ 4 GHz

s High MAG, > 18 dB @ 4 GHz

s 0.7 µm Ti/Pd/Au Gates

s Passivated Surface

AFP02N8-000

78

50

50

D

D

350

125

S

G

G

S

50

Description

The AFP02N8-000 general purpose PHEMT chip has

excellent gain and noise performance through X band,

making it suitable for a wide range of commercial and military

applications.The device employs 0.7 µm Ti/Pd/Au gates and

surface passivation to ensure a rugged, reliable part.

50

20

400

Absolute Maximum Ratings

Characteristic

Drain to Source Voltage (VDS)

Gate to Source Voltage (VGS)

Drain Current (IDS)

Gate Current (IGS)

Total Power Dissipation (PT)

Storage Temperature (TST)

Channel Temperature (TCH)

Value

6V

-3 V

IDSS

10 µA

300 mW

-65 to +150°C

175°C

Electrical Specifications at 25°C

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Saturated Drain Current (IDSS)

VDS = 2 V, VGS = 0 V

25.0

45.0

90.0

mA

Transconductance (gm)

VDS = 2 V, IDS = 15 mA

40.0

55.0

mS

Pinch-off Voltage (VP)

VDS = 2 V, IDS = 0.3 mA

-0.2

-0.6

-2.0

V

Gate to Source

Breakdown Voltage (Vbgs)

IGS = -200 µA

-4.0

-6.0

V

Noise Figure (NF)

Associated Gain (GA)

1.25

1.75

dB

VDS = 2 V, IDS = 15 mA, F = 4 GHz

14.0

15.0

dB

Noise Figure (NF)

Associated Gain (GA)

2.6

3.0

dB

VDS = 2 V, IDS = 15 mA, F = 12 GHz

8.5

9.4

dB

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com

1

Specifications subject to change without notice. 6/99A

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