RB501V-40 Ver la hoja de datos (PDF) - Unspecified
Número de pieza
componentes Descripción
Fabricante
RB501V-40 Datasheet PDF : 1 Pages
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SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD.
SOD-323 封装二极管/SOD-323 Plastic-Encapsulate Diodes
RB501V-40 (SCHOTTKY BARRIER DIODE)
特点/Features：
·Low current rectifier schottky diode；
·Low voltage, Low inductance；
·For power supply；
印章/ Marking: 4
极限参数/Absolute maximum ratings(Ta=25℃)
Parameter
Peak Reverse Voltage
DC Reverse Voltage
Mean Rectifying current
Peak Forward Surge Current
Junction Temperature
Storage Temperature
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Limit
45
40
0.1
1
150
-55～150
电性能参数/Electrical characteristics (Ta=25℃)
Parameter
Symbol
Conditions
Typ
Forward Voltage
VF
IF=10mA
IF=100mA
Reverse Current
IR
VR=10V
Capacitance Between Terminals CT
VR=10V,f=1.0MHz
6
Unit
V
V
A
A
℃
℃
Max
0.34
0.55
30
Unit
V
V
μA
pF
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