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MBRM120ET3 Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MBRM120ET3/D
™ Designer's Data Sheet
Surface Mount
Schottky Power Rectifier
MBRM120ET3
POWERMITE® Power Surface Mount Package
The Schottky Powermite employs the Schottky Barrier principle with a barrier metal
and epitaxial construction that produces optimal forward voltage drop–reverse current
tradeoff. The advanced packaging techniques provide for a highly efficient micro
miniature, space saving surface mount Rectifier. With its unique heatsink design, the
Powermite has the same thermal performance as the SMA while being 50% smaller in
footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry.
Because of its small size, it is ideal for use in portable and battery powered products such
as cellular and cordless phones, chargers, notebook computers, printers, PDAs and
PCMCIA cards. Typical applications are ac/dc and dc–dc converters, reverse battery
protection, and “Oring” of multiple supply voltages and any other application where
performance and size are critical.
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20 VOLTS
CATHODE
ANODE
Features:
• Low Profile — Maximum Height of 1.1 mm
• Small Footprint — Footprint Area of 8.45 mm2
• Low VF Provides Higher Efficiency and Extends Battery Life
• Supplied in 12 mm Tape and Reel — 12,000 Units per Reel
• Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink
CASE 457–04
ISSUE C
Mechanical Characteristics:
• Powermite is JEDEC Registered as D0–216AA
• Case: Molded Epoxy
• Epoxy Meets UL94, VO at 1/8″
• Weight: 62 mg (approximately)
• Device Marking: BCV
• Lead and Mounting Surface Temperature for Soldering Purposes. 260°C Maximum for 10 Seconds
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
20
V
VRWM
VR
Average Rectified Forward Current (At Rated VR, TC = 130°C)
IO
1.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 135°C)
IFRM
2.0
A
Non–Repetitive Peak Surge Current
(Non–Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
50
A
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR, TJ = 25°C)
THERMAL CHARACTERISTICS
Tstg
TJ
dv/dt
–65 to 150
°C
–65 to 150
°C
10,000
V/ms
Thermal Resistance – Junction–to–Lead (Anode) (1)
Thermal Resistance – Junction–to–Tab (Cathode) (1)
Thermal Resistance – Junction–to–Ambient (1)
Rtjl
Rtjtab
Rtja
35
°C/W
23
277
(1) Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 and 10.
POWERMITE is a registered trademark of MicroSemi Corporation
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Rev 2
©RMeoctotriofilea,rInDce. 1v9ic98e Data
1
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