2SD1877 Ver la hoja de datos (PDF) - SavantIC Semiconductor

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componentes Descripción

Fabricante

2SD1877

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1877

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0

800

V

VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8A

5

V

VBEsat

Base-emitter saturation voltage

IC=2.5A;IB=0.8A

1.5

V

ICBO

Collector cut-off current

VCB=800V; IE=0

10

µA

ICES

Collector cut-off current

VCB=1500V; RBE=0

1.0

mA

IEBO

Emitter cut-off current

VEB=4V; IC=0

40

130 mA

hFE-1

DC current gain

IC=0.5A ; VCE=5V

8

hFE-2

DC current gain

IC=2.5A ; VCE=5V

3.5

7

VF

Diode forward voltage

tf

Fall time

IEC=4A

IC=3A;RL=50@

IB1=0.8A;IB2=-1.6A;VCC=200V

2.0

V

0.1

0.3

µs

2

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