Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Número de pieza
componentes Descripción
2SC3076(2002) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SC3076
(Rev.:2002)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
Toshiba
2SC3076 Datasheet PDF : 5 Pages
1
2
3
4
5
1.2
1.0
IB = 5 mA
0.8
V
CE
– I
C
Common emitter
Tc = 25°C
10
20
0.6
0.4
30
40
0.2
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8
Collector current I
C
(A)
1.2
1.0
IB = 5 mA
10
0.8
V
CE
– I
C
Common emitter
Tc =
−
55°C
20
30
0.6
0.4
40
50
0.2
0
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Collector current I
C
(A)
2SC3076
V
CE
– I
C
1.2
Common emitter
1.0
Tc = 100°C
0.8 IB = 5 mA
10
20
0.6
0.4
30
40
0.2
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8
Collector current I
C
(A)
1000
500
300
100
50
30
h
FE
– I
C
Common emitter
VCE = 2 V
Tc = 100°C
25
−
55
10
0.01
0.03 0.05 0.1
0.3 0.5 1
2
Collector current I
C
(A)
V
CE (sat)
– I
C
1
Common emitter
0.5
IC/IB = 20
0.3
0.1
0.05
0.03
0.01
0.01
Tc = 100°C
25
−
55
0.03 0.05 0.1
0.3 0.5 1
2
Collector current I
C
(A)
V
BE (sat)
– I
C
10
Common emitter
5
IC/IB = 20
3
1
Tc =
−
55°C
0.5
25
0.3
100
0.1
0.01
0.03 0.05 0.1
0.3 0.5 1
2
Collector current I
C
(A)
3
2002-07-23
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]