NX25P40-VNI Ver la hoja de datos (PDF) - NexFlash -> Winbond Electronics

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NX25P40-VNI

1M-BIT, 2M-BIT AND 4M-BIT Serial Flash Memory with 40MHz SPI

NexFlash -> Winbond Electronics 

1M / 2M / 4M-BIT SERIAL FLASH MEMORY with 40MHz SPI

NX25P10, NX25P20 AND NX25P40

Read Data (03h)

The Read Data instruction allows one or more data bytes to

be sequentially read from the memory. The instruction is

initiated by driving the CS pin low and then shifting the

instruction code “03h” followed by a 24-bit address (A23-A0)

into the DI pin. The code and address bits are latched on the

rising edge of the CLK pin. After the address is received, the

data byte of the addressed memory location will be shifted

out on the DO pin at the falling edge of CLK with most

significant bit (MSB) first. The address is automatically

incremented to the next higher address after each byte of

data is shifted out allowing for a continuous stream of data.

This means that the entire memory can be accessed with

a single instruction as long as the clock continues. The

instruction is completed by driving CS high. The Read Data

instruction sequence is shown in figure 8. If a Read Data

instruction is issued while an Erase, Program or Write cycle

is in process (BUSY=1) the instruction is ignored and will not

have any effects on the current cycle. The Read Data

instruction allows clock rates from D.C. to a maximum of fR

( see AC Electrical Characteristics).

CS

Mode 3

CLK Mode 0

DI

DO

* = MSB

0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39

Instruction (03h)

24-Bit Addess

High Impedance

23 22 21

*

3210

Data Out 1

Data Out 2

7 6 54 3 2 1 07

*

Figure 8. Read Data Instruction Sequence Diagram

14

NexFlash Technologies, Inc.

PRELIMINARY MKP-0009 Rev 6 NXSF040I-0405

04/04/05 ©

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