NTD4808N-1G(2012) Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
NTD4808N-1G Datasheet PDF : 8 Pages
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NTD4808N, NVD4808N
TYPICAL PERFORMANCE CURVES
2000
1500
TJ = 25°C
Ciss
1000
500
Coss
0
Crss
0
5
10
15
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
100
tr
td(off)
10
td(on)
tf
1
1
VDD = 15 V
ID = 30 A
VGS = 11.5 V
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
1000
VGS = 20 V
SINGLE PULSE
TC = 25°C
100
10 ms
100 ms
10
1 ms
1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
dc
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
5
4
Q1
QT
Q2
3
2
VDD = 15 V
1
VGS = 4.5 V
ID = 30 A
0
TJ = 25°C
0 1 2 3 4 5 6 7 8 9 10 11 12
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
30
VGS = 0 V
25 TJ = 25°C
20
15
10
5
0
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
100
90
ID = 17 A
80
70
60
50
40
30
20
10
0
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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