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MHW2821-2 Datasheet PDF : 6 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Silicon FET Power
Amplifiers
Designed for 12.5 volt UHF power amplifier applications in industrial and
commercial FM equipment operating from 806 to 950 MHz.
• Specified 12.5 Volt Characteristics:
RF Input Power: ≤ 250 mW (MHW2821–1)
RF Input Power: ≤ 300 mW (MHW2821–2)
RF Output Power: 20 W (MHW2821–1)
RF Output Power: 18 W (MHW2821–2)
• LDMOS FET Technology
• Epoxy Glass Substrate Eliminates Possibility of Substrate Fracture
• 50 Ω Input/Output Impedance
• Guaranteed Stability and Ruggedness
• Cost Effective
Order this document
by MHW2821/D
MHW2821-1
MHW2821-2
–1: 20 W, 806 – 870 MHz
–2: 18 W, 890 – 950 MHz
RF POWER AMPLIFIER
CASE 301AB–02, STYLE 1
MAXIMUM RATINGS (Flange Temperature = 25°C)
Rating
DC Supply Voltages
RF Input Power
RF Output Power
Operating Case Temperature Range
Storage Temperature Range
Symbol
Vbias,
VS2, VS3
Pin
Pout
TC
Tstg
Value
Unit
12.5
Vdc
16
400
mW
23
W
– 30 to +100
°C
– 30 to +100
°C
ELECTRICAL CHARACTERISTICS (VS2 = VS3 = 12.5 Vdc; Vbias = 12.5 Vdc; TC = + 25°C, 50 Ω system, unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Frequency Range
MHW2821–1
MHW2821–2
BW
806
870
MHz
890
950
Input Power (Pout = 20 W) (1)
Input Power (Pout = 18 W) (1)
Power Gain (Pout = 20 W) (1)
Power Gain (Pout = 18 W) (1)
Efficiency (Rated Pout)
Harmonics (Rated Pout Reference) (1)
Input VSWR (Rated Pout) (1)
(1) Adjust Pin for specified Pout.
MHW2821–1
MHW2821–2
MHW2821–1
MHW2821–2
Pin
GP
η
2fo
3fo
VSWRin
—
250
mW
—
300
19
—
dB
17.9
—
35
—
%
—
– 40
dBc
—
– 45
—
3:1
dB
(continued)
©MMOotTorOolRa,OInLc.A19R96F DEVICE DATA
MHW2821–1 MHW2821–2
1
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