MMBD101 Ver la hoja de datos (PDF) - Leshan Radio Company

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Fabricante

MMBD101

Schottky Barrier Diodes

Leshan Radio Company 

LESHAN RADIO COMPANY, LTD.

Schottky Barrier Diodes

Designed primarily for UHF mixer applications but suitable also for use

in detector and ultra-fast switching circuits.Supplied in an inexpensive

plastic package for low-cost,high-volume consumer requirements.Also

available in Surface Mount package.

• Low Noise Figure—6.0dB Typ@1.0GHz

• Very Low Capacitance—Less Than 1.0pF@zero Volts

• High Forward Conductance—0.5volts(typ)@IF=10mA

MMBD101LT1

SILICON SCHOTTKY

BARRIER DIODES

3

3

CATHODE

1

ANODE

1

2

CASE 318–08, STYLE 6

SOT– 23 (TO–236AB)

MAXIMUM RATINGS

MBD101 MMBD101LT1

Rating

symbol

value

unit

Reverse Voltage

vR

Forward Power Dissipation

pF

@TA=25 °C

7.0

280

225

Volts

mW

Derate above 25 °C

2.2

1.8

mW/ °C

Junction Temperature

TJ

Storage Temperature Range

Tstg

DEVICE MARKING

+150

°C

–55 to +150

°C

MMBD101LT1=4M

ELECTRICAL CHARACTERISTICS(TA=25 °C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Reverse Breakdown Voltage

(IR= 10µAdc)

V(BR)R

7.0

10

Diode Capacitance

(VR= 0,f =1.0MHz,Note1)

Forward Voltage(1)

(I F= 10mAdc)

CT

—

0.88

VF

—

0.5

Reverse Leakage

IR

—

0.02

(VR= 3.0Vdc)

Max

—

1.0

0.6

0.25

Unit

Volts

pF

Volts

µAdc

NOTE: MMBD101LT1 is also available in bulk packaging.Use MMBD101L as the device title to order this device in bulk.

G15–1/2

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