MJF15031 Ver la hoja de datos (PDF) - Inchange Semiconductor

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Fabricante

MJF15031

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

MJF15031

DESCRIPTION

·With TO-220F package

·Complement to type MJE15028/30

·High transition frequency

·DC Current Gain Specified to 4.0 Amperes

hFE = 40 (Min) @ IC =- 3.0 Adc

hFE = 20 (Min) @ IC = -4.0 Adc

APPLICATIONS

·Designed for use as high–frequency

drivers in audio amplifiers.

PINNING

PIN

1

2

3

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

·

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Tc=25℃)

SYMBOL

PARAMETER

VCBO

Collector-base voltage

VCEO

Collector-emitter voltage

VEBO

Emitter-base voltage

IC

Collector current (DC)

ICM

Collector current-Peak

IB

Base current

PD

Total power dissipation

Tj

Junction temperature

Tstg

Storage temperature

CONDITIONS

Open emitter

Open base

Open collector

Ta=25℃

TC=25℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-C

Thermal resistance ; junction to case

Rth j-A

Thermal resistance , junction to ambient

VALUE

-150

-150

-5

-8

-16

-2

2

36

150

-65~150

UNIT

V

V

V

A

A

A

W

℃

℃

MAX

3.5

62.5

UNIT

℃/W

℃/W

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