MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Silicon FET
Power Amplifiers
Designed for 7.5 volt UHF power amplifier applications in industrial and
commercial equipment primarily for hand portable radios.
• Specified 7.5 Volt Characteristics:
RF Input Power: 20 mW (13 dBm)
RF Output Power: 7 W
Minimum Gain (Vcont = 7 V): 25.5 dB
Harmonics: – 35 dBc Max @ 2.0 fo 350 – 360 MHz
– 40 dBc Max @ 2.0 fo 360 – 400 MHz
• Epoxy Glass PCB Construction Gives Consistent Performance
and Reliability
• 50 Ω Input/Output Impedances
• Guaranteed Stability and Ruggedness
Order this document
by MHW2727/D
MHW2727-3
7 W,
350 – 400 MHZ
UHF POWER AMPLIFIERS
MAXIMUM RATINGS (Flange Temperature = 25°C)
Rating
DC Supply Voltage (Pins 3, 4)
DC Control Voltage (Pin 2)
RF Input Power
RF Output Power (VDD1, 2 = 9 V)
Operating Case Temperature Range
Storage Temperature Range
CASE 420AC–01 , STYLE 1
Symbol
Value
Unit
VDD1, 2
9
Vdc
Vcont
9
Vdc
Pin
40
mW
Pout
9
W
TC
– 30 to +100
°C
Tstg
– 30 to +100
°C
© MMoOtorToOla,RInOc.L1A99R7 F DEVICE DATA
MHW2727–3
1