EMX1 Ver la hoja de datos (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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EMX1 Datasheet PDF : 4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-563 Plastic-Encapsulate Transistors
EMX1 DUAL TRANSISTOR(NPN+NPN)
FEATURES
z Two 2SC2412K chips in a SOT-563 package
z Mounting possible with SOT-563 automatic mounting machines
z Transistor elements are independent, eliminating interference
z Mountingcostandareacanbecutinhalf
SOT-563
MARKING:X1
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
7
150
150
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=50μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=50μA,IC=0
ICBO
VCB=60V,IE=0
IEBO
VEB=7V,IC=0
hFE
VCE=6V,IC=1mA
VCE(sat) IC=50mA,IB=5mA
fT
VCE=12V,IC=2mA,f=100MHz
Cob
VCB=12V,IE=0,f=1MHz
Min Typ Max Unit
60
V
50
V
7
V
0.1
μA
0.1
μA
120
560
0.4
V
180
MHz
2.0
3.5
pF
www.cj-elec.com
1
DA,JMuany,2,2001145
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